1/9/2024 0 Comments Flow free bridges 9x9 level 25Il devient donc envisageable d'intégrer les antennes ainsi que d'autres composants passifs directement dans l'empilement technologique du circuit ou dans le boitier. ![]() A ces fréquences, la longueur d'onde en espace libre est comparable aux dimensions caractéristiques des boitiers standards utilisés pour l'encapsulation des transceivers. Dans le cadre de ces travaux de thèse, un intérêt particulier sera porté sur les modules intégrés sans fils et à faible consommation opérant dans la bande 57 – 66 GHz (dite généralement 60 GHz). Plus particulièrement, le secteur des télécommunications connaît aujourd'hui une réelle révolution avec la création de nouveaux standards pour les liens sans-fil millimétriques à courte portée (comme WiGiG et IEEE 802.11ad) et l'apparition de nouvelles architectures basées sur des liaisons point-à-point qui constitueront dans les prochaines années la colonne vertébrale de la cinquième génération des réseaux mobiles. Cette évolution a conduit à la diversification des applications en bandes millimétriques (30 – 300 GHz) dans les secteurs des télécommunications, du divertissement multimédia, de l'automobile et de la sécurité. L'évolution des nœuds technologiques dans l'industrie des semi-conducteurs se traduit de nos jours, dans le domaine des radiofréquences, par une miniaturisation des front-ends et une amélioration des performances électriques des émetteurs-récepteurs à des fréquences de plus en plus hautes. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Little research has been carried out until now. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. TSV-based silicon interposers have been applied in the ground environment. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. Finally, a complete test vehicle with a molded-underfilled interposer reported on an organic substrate has been achieved. Cross-sections have highlighted cracks in solder joints leading to the development of an improved version of the compound. While the daisy chains resistances remained in specifications after molding and pre-conditioning, some electrical failures appeared after 250 thermal cycles. ![]() Electrical performances of the 35μm high Cu pillars interconnections have been measured on the interposer backside thanks to TSVs and rerouting. 170μm thick dice have been assembled on 120μm thin silicon interposers having 60μm diameter TSV via-last and encapsulated with optimized wafer-level MUF process. For this study, a molding-last approach using a dry-film lamination process has been chosen. A focus is made on void-less molding-underfilling process development and wafer level reliability evaluation of first level (die to wafer) interconnections and TSV subjected to thermal cycles. After a materials screening with regard to warpage issue, “molding last” was studied with the selected material, including compatibility with temporary bonding debonding, bumping, sawing and report on organic substrate. The developments were carried out in the frame of “silicon package” where the silicon interposer is either reported on P-BGA or directly assembled on board. ![]() This paper is dedicated to the full integration of a new silicone-based material for Molding-Underfilling (MUF) on silicon interposer wafers containing Through Silicon Vias (TSVs) and top dice.
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